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| Transistor 2SB642 Silicon PNP epitaxial planer type For low-power general amplification Unit: mm 6.90.1 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 s Features q q 1.5 0.4 1.5 R0.9 R0.9 High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.00.1 R 0. 0.85 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25C) Ratings -60 -50 -7 -200 -100 400 150 -55 ~ +150 Unit V V V mA mA mW C C 1:Base 2:Collector 3:Emitter 3 0.550.1 1.250.05 0.450.05 2 1 2.5 2.5 EIAJ:SC-71 M Type Mold Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) fT Cob Conditions VCB = -20V, IE = 0 VCE = -20V, IB = 0 IC = -10A, IE = 0 IC = -2mA, IB = 0 IE = -10A, IC = 0 VCE = -10V, IC = -2mA IC = -100mA, IB = -10mA VCB = -10V, IE = 2mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz 80 3.5 -60 -50 -7 160 460 -1 V MHz pF min typ max -1 -1 Unit nA A V V V *h FE Rank classification Q 160 ~ 260 R 210 ~ 340 S 290 ~ 460 hFE Rank 4.10.2 4.50.1 7 1 Transistor PC -- Ta 500 -60 Ta=25C 450 -50 IB=-300A -250A -40 -200A -30 -50 2SB642 IC -- VCE -60 VCE=-5V Ta=25C IC -- I B Collector power dissipation PC (mW) Collector current IC (mA) 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Collector current IC (mA) -20 400 -40 -150A -30 -20 -100A -20 -10 -50A -10 0 0 -4 -8 -12 -16 0 0 -150 -300 -450 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (A) IB -- VBE -400 VCE=-5V Ta=25C -350 -200 -240 IC -- VBE Collector to emitter saturation voltage VCE(sat) (V) -10 -3 -1 VCE=-5V 25C Ta=75C -25C VCE(sat) -- IC IC/IB=10 Base current IB (A) -300 -250 -200 -150 -100 -50 0 0 - 0.6 -1.2 -1.8 Collector current IC (mA) -160 Ta=75C 25C -25C - 0.3 - 0.1 - 0.03 - 0.01 -120 -80 -40 - 0.003 - 0.001 -1 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 -3 -10 -30 -100 -300 -1000 Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA) hFE -- IC 600 VCE=-10V 160 140 120 100 80 60 40 20 0 -1 0 0.1 VCB=-10V Ta=25C fT -- I E 8 Cob -- VCB Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) 7 6 5 4 3 2 1 0 -1 400 Ta=75C 300 25C -25C 200 100 -3 -10 -30 -100 -300 -1000 0.3 1 3 10 30 100 -3 -10 -30 -100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 2 Transistor Cre -- VCE Common emitter reverse transfer capacitance Cre (pF) 6 IC=-1mA f=10.7MHz Ta=25C 6 VCB=-5V f=1kHz Rg=2k Ta=25C 2SB642 NF -- IE 20 18 16 VCB=-5V Rg=50k Ta=25C NF -- IE 5 5 Noise figure NF (dB) Noise figure NF (dB) 4 4 14 12 10 8 6 4 2 10kHz f=100Hz 1kHz 3 3 2 2 1 1 0 0 -5 -10 -15 -20 -25 -30 0 0.01 0.03 0.1 0.3 1 3 10 0 0.1 0.3 1 3 10 Collector to emitter voltage VCE (V) Emitter current IE (mA) Emitter current IE (mA) h Parameter -- IE 300 hfe 100 100 300 h Parameter -- VCE 100 IE=2mA f=270Hz Ta=25C 30 ICBO -- Ta VCB=-10V hfe 30 hoe (S) 30 hoe (S) 10 ICBO (Ta) ICBO (Ta=25C) -100 h Parameter h Parameter 10 10 hie (k) 3 VCE=-5V f=270Hz Ta=25C 3 10 1 -1 3 hre (!10-4) hie (k) 3 1 0.1 hre (!10-4) 0.3 1 1 -3 -10 -30 0 25 50 75 100 125 150 Emitter current IE (mA) Collector to emitter voltage VCE (V) Ambient temperature Ta (C) 3 |
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